View STP9NK80Z_1319126.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

STP9NK80Z STF9NK80Z
N-CHANNEL 800V -0.9 - 7.5A TO-220/TO-220FP Zener-Protected SuperMESHTMMOSFET
Table 1: General Features
TYPE STP9NK80Z STF9NK80Z
s s s s s s s
Figure 1: Package
ID 7.5 A 7.5 A Pw 150 W 35 W
VDSS 800 V 800 V
RDS(on) <1.2 <1.2
TYPICAL RDS(on) = 0.9 EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE RATED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY
3 1 2
TO-220
TO-220FP
DESCRIPTION The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshTM products. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES s SMPS
Figure 2: Internal Schematic Diagram
Table 2: Order Codes
SALES TYPE STP9NK80Z STF9NK80Z MARKING P9NK80Z F9NK80Z PACKAGE TO-220 TO-220FP PACKAGING TUBE TUBE
Rev. 1 May 2005 1/11
STP9NK80Z - STF9NK80Z
Table 3: Absolute Maximum ratings
Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) VISO Tj Tstg Parameter
TO-220
Value
TO-220FP
Unit V V V 7.5 (*) 4.7 (*) 30 (*) 35 0.28 A A A W W/C V V/ns 2500 V C C
Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5K) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature 7.5 4.7 30 150 1.20
800 800 30
4000 4.5
-55 to 150 -55 to 150
( ) Pulse width limited by safe operating area (1) ISD 7.5A, di/dt 200A/s, VDD = 80% V(BR)DSS (*) Limited only by maximum temperature allowed
Table 4: Thermal Data
TO-220 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 0.83 62.5 350 TO-220FP 3.6 C/W C/W C
Table 5: Avalanche Characteristics
Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Max Value 7.5 350 Unit A mJ
Table 6: Gate-Source Zener Diode
Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs= 1mA (Open Drain) Min. 30 Typ. Max. Unit V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.
2/11
STP9NK80Z - STF9NK80Z
ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) Table 7: On/Off
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 20V VDS = VGS, ID = 100A VGS = 10V, ID = 3.75 A 3 3.75 0.9 Min. 800 1 50 10 4.5 1.2 Typ. Max. Unit V A A A V
Table 8: DYNAMIC
Symbol gfs (1) Ciss Coss Crss Coss eq. (3) td(on) tr td(off) tf tr(Voff) tf tc Qg Qgs Qgd Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDS = 15 V, ID = 3.75 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 7.5 1900 180 38 75 26 19 58 18 12 10 24 60 12 35 84 Max. Unit S pF pF pF pF ns ns ns ns ns ns ns nC nC nC
VGS = 0V, VDS = 0V to 640V VDD = 400 V, ID = 3.75 A RG = 4.7 VGS = 10 V (see Figure 19)
VDD = 640 V, ID = 7.5A, RG = 4.7, VGS = 10V (see Figure 20) VDD = 640V, ID = 7.5 A, VGS = 10V (see Figure 22)
Table 9: Source Drain Diode
Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 7.5 A, VGS = 0 ISD = 7.5 A, di/dt = 100A/s VDD = 35V, Tj = 25C (see Figure 20) ISD = 7.5 A, di/dt = 100A/s VDD = 35V, Tj = 150C (see Figure 20) 530 4.5 17 690 6.4 17 Test Conditions Min. Typ. Max. 7.5 30 1.6 Unit A A V ns C A ns C A
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
3/11
STP9NK80Z - STF9NK80Z
Figure 3: Safe Operating Area for TO-220 Figure 6: Thermal Impedance for TO-220
Figure 4: Safe Operating Area for TO-220FP
Figure 7: Thermal Impedance for TO-220FP
Figure 5: Output Characteristics
Figure 8: Transfer Characteristics
4/11
STP9NK80Z - STF9NK80Z
Figure 9: Transconductance Figure 12: Static Drain-source On Resistance
Figure 10: Gate Charge vs Gate-source Voltage
Figure 13: Capacitance Variations
Figure 11: Normalized Gate Thereshold Voltage vs Temperature
Figure 14: Normalized BVDSS vs Temperature
5/11
STP9NK80Z - STF9NK80Z
Figure 15: Normalized On Resistance vs TemperatureS Figure 17: Source-Drain Diode Forward Characteristics
Figure 16: Avalanche Energy vs Temperature
6/11
STP9NK80Z - STF9NK80Z
Figure 18: Unclamped Inductive Load Test Circuit Figure 21: Unclamped Inductive Wafeform
Figure 19: Switching Times Test Circuit For Resistive Load
Figure 22: Gate Charge Test Circuit
Figure 20: Test Circuit For Inductive Load Switching and Diode Recovery Times
7/11
STP9NK80Z - STF9NK80Z
TO-220 MECHANICAL DATA
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
oP
Q
8/11
STP9NK80Z - STF9NK80Z
TO-220FP MECHANICAL DATA
mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O
A
B
L3 L6 L7
F1 F
D
G1 H
F2
E
L2
L5
123
L4
G
9/11
STP9NK80Z - STF9NK80Z
Table 10: Revision History
Date 18-May-2005 Revision 1 First Release. Description of Changes
10/11
STP9NK80Z - STF9NK80Z
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
11/11

▲Up To Search▲

Price & Availability of STP9NK80Z

	To Download STP9NK80Z Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .